Products

Compact 6kW design for research and small-size diamond growth

High-precision temperature control for stable, repeatable growth

PLC automatic control system for easy operation

MKS 10kW microwave power supply, stable and efficient.

High-precision motorized lifting temperature control (±5°C)

Siemens 1500 PLC + 13.6-inch touch screen

15kW domestic microwave power supply, high cost-effectiveness

High-precision motorized lifting temperature control (±5°C)

Siemens 1500 G2 PLC + 13-inch touch screen

915MHz 100kW high-power microwave power supply

Supports growth platforms larger than 8 inches.

Efficient water cooling, supporting high-power continuous operation.

Produced using MFC gas disk MPCVD equipment, with high process stability and reliable batch consistency.

The product has high purity and low impurities, meeting the application needs of high-end jewelry and precision industry.

The crystal growth has strong controllability, and the size and quality can be customized on demand.

Hinged aluminum dish-shaped chamber design, the top hinged lid is easy to clean and allows for rapid secondary growth.

After mass production verification and iterative upgrades across hundreds of devices, it is mature and reliable.

The plasma is kept away from the quartz window, ensuring good overall sealing and an extremely low leak rate.

Hinged aluminum dish-shaped chamber structure, optional stainless steel chamber, mature mass-production design.

Supports 4–4.72 inch (100–120mm) large-size growth platforms, suitable for simultaneous growth of multiple wafers.

Standard configuration includes 4 side observation windows, 4 sapphire angled observation windows, and 1 sapphire top window, allowing full visibility throughout the growth process.

Modular filter design: quick replacement without downtime, effectively shortening maintenance time.

Large capacity and long service life: high dirt-holding capacity, reduced replacement frequency, suitable for continuous high-load operation.

Pressure-resistant sealing structure: compatible with multiple fluid systems, suitable for harsh operating conditions.

Dish-shaped cavity self-developed technology platform, validated and iteratively upgraded through mass production of hundreds of units.

Manual lid opening (top-lift lid) design, easy to clean, rapid secondary growth.

The plasma is kept away from the quartz window, ensuring good overall sealing and an extremely low leak rate.

The all-metal sealing structure, combined with a high-cleanliness flow channel design, effectively reduces particle precipitation and gas adsorption, meeting the stringent requirements of clean operating conditions.

High-precision closed-loop control achieves precise pressure stabilization over a wide range, with minimal pressure fluctuations, ensuring a stable and reliable process.

Multi-stage exhaust and automatic switching mechanism, flexibly adapting to various process scenarios such as vacuum pumping, purging, and exhaust gas discharge.

High-speed closed-loop control: real-time matching of setpoint and actual process value, precise control with a wide dynamic range of the proportional valve.

Dual control modes: 0–10V DC analog input and Modbus RTU digital setting can be switched freely.

10kHz high-frequency PWM drive output, duty cycle 0~100% linearly adjustable

Adopt the standard color grading system for rough lab-grown diamonds to ensure that the testing results are universally applicable and comparable across the industry.

Integrates high-precision optical sensing and intelligent algorithms to automatically determine the color grade of blanks, eliminating subjective human errors.

Suitable for rapid quality inspection of batch-cultivated rough diamonds, significantly improving sorting efficiency and consistency.

Diamondcut-532-20-8 laser, wavelength 532nm, maximum power 20W@8k, specifically designed for high-power diamond cutting.

The XYZ-axis accuracy reaches 1μm, meeting ultra-high-precision cutting requirements and suitable for large-scale production scenarios.

High-precision positioning system and autofocus system ensure stable and consistent cutting quality.

◆ High-purity Type IIa crystals — nitrogen impurity < 10 ppm, can be reduced to ppb level, no metal catalyst residue, industry-leading crystal purity

◆ Excellent crystal quality — dislocation density < 10³ /cm², XRD rocking curve FWHM < 50 arcsec, highly complete lattice

◆ Large-size single crystal capability — plate dimensions up to 60 × 60 mm, thickness controllable from 0.3 to 3.0 mm, and larger sizes can be grown to meet customization needs.

Homologous genuine diamond: Its performance under gemological instrument testing is consistent with that of natural diamonds, and it possesses diamond fire and sparkle effects.

Ethical sustainability: conflict-free mining, low environmental impact, green cultivation.

High cost-effectiveness: Comparable to 4C quality, priced far below natural diamonds.

Ultra-high thermal conductivity: 1000–2200 W/(m·K), approximately 5 times that of copper and 3 times that of silver, enabling efficient heat dissipation for high-power electronic devices and significantly reducing junction temperature.

Low thermal expansion coefficient: approximately 1.0×10⁻⁶/°C, which matches well with the thermal expansion of semiconductor materials such as GaN and SiC, effectively reducing thermal stress and the risk of device failure.

Excellent electrical insulation: resistivity >10¹³ Ω·cm, low dielectric constant, heat dissipation while achieving electrical isolation, suitable for high-power electronic devices.

Ultra-high thermal conductivity: thermal conductivity ranges from 1000–1800 W/(m·K), with heat dissipation efficiency significantly superior to traditional metal and ceramic materials.

High thermal stability: It can maintain excellent thermal management performance over the long term in high-temperature environments.

Excellent electrical insulation: volume resistivity up to 2.95×10¹⁵ Ω·cm (25℃), dielectric strength 11 KV/mm

Ultra-high thermal conductivity: 1000–2200 W/(m·K), far exceeding copper and silver, suitable for heat dissipation in high-power devices.

High thermal stability: low coefficient of thermal expansion (about 1.0×10⁻⁶/°C), high temperature resistance, and good matching with semiconductor materials.

Excellent electrical insulation: resistivity >10¹³ Ω·cm, low dielectric constant, suitable for high-power electronic devices.